Abstract:

CdO or Cadmium oxide is frequently employed in photovoltaic and optoelectronic devices as an n-type semiconductor due to its unsurpassed transparency and conductivity. Unfortunately, methods that implement doping by varying the temperature and methods of preforming the initial steps tend to have poor homogeneity or uncontrolled growth of grains and poor regression on the band gap and capacitance which limits the use of CdO in modern electronic devices. To solve these problems, the current study uses the Sol-Gel Method (SGM) of doping Zn and Cu on CdO which is both economical and has a low combustion or synthesis temperature. The SGM enhances the mixing of the materials at the molecular level thus improving crystallinity while also ensuring uniform distribution of doping that might have caused issues with previous methods. This method permits a comprehensive examination of results and optimum alteration of the material properties thereby understanding the effects of doping.The findings show that doping CdO with Zn and Cu changes the electrical conductivity, optical band gap, and dielectric properties of CdO. The improvements in capacitance and in the tunability of the band gap demonstrate the capabilities of SGM in optimizing CdO materials for advanced electronics and optoelectonics.